1 2 3 n - channel devicepackageshipping ordering information BSS138LT1 sotC2 33000 t ape & reel j1 = device code m = month code marking diagram & pin assignment power mosfet 200 mamps, 50 volts nchannel sot23 typical applications are dcCdc converters, power management in portable and batteryCpowered products such as computers, printers, pcmcia cards, cellular and cordless telephones. ? low threshold voltage (v gs(th): 0.5v...1.5v) makes it ideal for low voltage applications ? miniature sotC23 surface mount package saves board space symbol value unit drainCtoCsource voltage v dss 50 vdc gateCtoCsource voltage C continuous v gs 20 vdc drain current C continuous @ t a = 25c C pulsed drain current (t p 10 m s) i d i dm 200 800 ma total power dissipation @ t a = 25 c p d 225 mw operating and storage temperature range t j, t stg C 55 to 150 c thermal resistance C junctionCtoCambient r qja 556 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c rating maximum ratings (t a = 25 o c unless otherwise noted) ? j1 m 2012-10 willas electronic corp. bss 8l t1 sot C23
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainCtoCsource breakdown voltage (v g s = 0 vdc, i d = 250 madc) v (br)dss 50 C C vdc zero gate voltage drain current (v d s = 25 vdc, v gs = 0 vdc) (v ds = 50 vdc, v gs = 0 vdc) i dss C C C C 0.1 0.5 m adc gateCsource leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss C C 0.1 m adc on characteristics (note 1.) gateCsource threshold voltage (v d s = v g s , i d = 1.0 madc) v gs(th) 0.5 C 1.5 vdc static drainCtoCsource onCresistance (v gs = 2.75 vdc, i d < 200 madc, t a = C40c to +85 c) (v gs = 5.0 vdc, i d = 200 madc) r ds(on) C C 5.6 C 10 3.5 ohms forward transconductance (v d s = 25 vdc, i d = 200 madc, f = 1.0 khz) g fs 100 C C mmhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0, f = 1 mhz) c iss C 40 50 pf output capacitance (v ds = 25 vdc, v gs = 0, f = 1 mhz) c oss C 12 25 transfer capacitance (v dg = 25 vdc, v gs = 0, f = 1 mhz) c rss C 3.5 5.0 switching characteristics (note 2.) turnCon delay time (v t d(on) C C 20 ns turnCoff delay time (v dd = 30 vdc, i d = 0.2 adc,) t d(off) C C 20 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature. 2012-10 willas electronic corp. power mosfet 200 mamps, 50 volts bss 8l t1
typical electrical characteristics r ds(on) , drain-to-source resistance (normalized) figure 1. onregion characteristics 1 t j , junction temperature ( c) figure 2. transfer characteristics figure 3. onresistance variation with temperature v gs = 10 v i d = 0.8 a -55 -5 45 95 145 0.6 0.8 v gs , gate-to-source voltage (volts) 0 4 0 q t , total gate charge (pc) 8 500 v ds = 40 v t j = 25 c 1000 i d = 200 ma 1500 1.2 2 1.4 1.6 1.8 v gs = 4.5 v i d = 0.5 a 2000 10 2 6 v gs(th) , variance (volts) 1 t j , junction temperature ( c) i d = 1.0 ma -55 -5 45 95 145 0.75 0.875 1.125 1.25 0 0.3 0.4 0.1 0.6 0.2 figure 4. threshold voltage variation with temperature 1 1.5 2 2.5 3 i d , drain current (amps) v gs , gate-to-source voltage (volts) figure 5. gate charge v ds = 10 v 150 c 25 c -55 c 3.5 0.5 4 024 10 0 0.3 0.4 v ds , drain-to-source voltage (vol ts) i d , drain current (amps) 6 0.1 8 0.6 0.2 0.5 13 9 57 v gs = 3.25 v v gs = 2.75 v v gs = 2.5 v v gs = 3.0 v v gs = 3.5 v 0.7 0.8 t j = 25 c 0.7 0.8 0.9 4.5 0.50 2.2 -30 20 70 120 2500 3000 2012-10 willas electronic corp. power mosfet 200 mamps, 50 volts bss 8l t1
typical electrical characteristics r ds(on) , drain-t o-source resistance (ohms) figure 6. onresistance versus drain current 0 0.1 0.2 2 5 6 figure 7. onresistance versus drain current i d , drain current (amps) figure 8. onresistance versus drain current 0.001 0.1 1 figure 9. onresistance versus drain current v sd , diode forward voltage (volts) figure 10. body diode forward voltage i d , diode current (amps) 25 c v gs = 2.5 v t j = 150 c 4 0 0.2 0.4 0.6 3 0.01 -55 c 25 c 0.8 r ds(on) , drain-to-source resistance (ohms) 0 0.1 0.2 1 7 i d , drain current (amps) v gs = 2.75 v 5 3 0 120 40 0 80 510 c iss 15 0.05 0.15 0.25 150 c -55 c 6 8 4 2 0.05 0.15 0.25 20 1.0 1.2 150 c 25 c -55 c 8 9 7 100 20 60 figure 11. capacitance r ds(on) , drain-t o-source resistance (ohms) 0 0.2 0.4 0.05 1 2.5 3 i d , drain current (amps) 25 c v gs = 4.5 v 2 1.5 r ds(on) , drain-t o-source resistance (ohms) 0 0.2 0.4 0.05 1 4 i d , drain current (amps) v gs = 10 v 3 2 0.1 0.3 0.5 150 c -55 c 3.5 4.5 2.5 1.5 0.1 0.3 0.5 150 c 25 c -55 c 4 4.5 3.5 10 1 0.25 0.45 0.15 0.35 5 5.5 6 0.25 0.45 0.15 0.35 25 c oss c rss 2012-10 willas electronic corp. power mosfet 200 mamps, 50 volts bss 8l t1
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012-10 willas electronic corp. power mosfet 200 mamps, 50 volts bss 8l t1 sot - 23 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .086(2. 1 0) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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